| 摘要 |
PURPOSE:To reduce a stress of a film as compared with a case where an interlayer film is composed of only a plasma nitride film and to realize the excellent crack resistance of the plasma nitride film by a method wherein an insulating film of a semiconductor device having the insulating film formed on a semiconductor substrate by a plasma CVD method is composed of an oxy-nitride film having a refractive index of 1.75-1.85. CONSTITUTION:After a first-layer Al wiring part has been formed on a semiconductor substrate 11, an oxy-nitride film 14 having a refractive index of 1.75-1.85 is formed by a plasma CVD method. In order to form this oxy-nitride film, N2O gas as an oxidizing gas is added to a mixed gas of SiH4, NH3 and N2. If the oxidizing gas is added to the raw gas of SiH4, NH3 and N2, the oxy- nitride film whose internal stress is small can be formed; if this film is used as an interlayer insulating film between Al wiring parts of a semiconductor device or as a cover film on the Al wiring parts, it is possible to prevent the Al wiring parts from disappearing due to stress migration.
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