发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To simplify structure, to eliminate the need for adjustment work requiring large workhours for optically coupling a photodetector for laser beams and to reduce manufacturing cost by unifying the photodetector for monitoring a laser optical output for fixed-output drive with a laser element. CONSTITUTION:With a semiconductor laser element, an n-type clad layer 2, an active layer 3, a p-type clad layer 4 and a cap layer 5 are superposed onto an n-type substrate 1. Electrode metals 6, 6', 7 are formed on the cap layer 5 side and the substrate side. A trench 10 reaching the substrate 1 is shaped through etching from the cap layer side in the dice-shaped semiconductor laser element, and the laser element is separated into two sections. Since a left section functions as the laser element 12 and a right section forms a p-n junction, the right section can be operated as a photodetector 13 by applying a DC bias in the opposite direction. Since laser beams 11 radiated toward the photodetector 13 from the laser element 12 are projected to the p-n junction section near the active layer in the photodetector 13, they can be received with excellent sensibility.
申请公布号 JPS63244896(A) 申请公布日期 1988.10.12
申请号 JP19870080208 申请日期 1987.03.31
申请人 NEC CORP 发明人 KATAYAMA SHOJI
分类号 H01S5/00;H01S5/026 主分类号 H01S5/00
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