| 摘要 |
PURPOSE:To reduce the line capacitance between aluminum wiring parts and, at the same time, to enhance moisture resistance by a method wherein a lower layer is formed by a film composed of a material with a low dielectric constant and its upper layer is formed by a nitride film. CONSTITUTION:A lower layer of a surface protective film to protect a metal wiring part formed on a semiconductor substrate via an insulating film is formed by a film 6 composed of a material with a low dielectric constant; its upper layer is formed by a nitride film 5. This surface protective film can reduce the line capacitance between aluminum wiring parts because its lower layer is formed by the film composed of the material with the low dielectric constant; it is possible to realize a high-speed circuit and to expand a voltage operation margin. In addition, because its upper layer is formed by the nitride film, moisture resistance is high.
|
