发明名称 Blanket tungsten deposition for dielectric
摘要 A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.
申请公布号 US4777061(A) 申请公布日期 1988.10.11
申请号 US19870132739 申请日期 1987.12.14
申请人 SPECTRUM CVD, INC. 发明人 WU, SCHYI-YI;PRICE, J. B.;MENDONCA, JOHN;CHOW, YU CHANG
分类号 C23C16/14;C23C16/50;(IPC1-7):B05D3/06 主分类号 C23C16/14
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