| 摘要 |
PURPOSE:To enhance stripping power against photoresists subjected to baking, etching, and the like by using a stripping liquid specified in composition for stripping the photoresist used in semiconductor manufacturing processes. CONSTITUTION:The photoresist stripping liquid is composed essentially of tetrachlorodifluoroethanes, such as tetrachloro-1,2-difluoroethane and tetra chloro-1,1-difluoroethane, as a first component low in toxicity for exhibiting detergent effect; phenols, such as xylenols and p-fluorophenol, as a second compo nent; at least one of compd. selected from aromatic hydrocarbons, such as xylenes and cumene, halogenated aromatic hydrocarbons, aromatic carboxylates, such as methyl salicylate, as a third component, both of the second and third components for exhibiting a dissolving effect; and aromatic sulfonic acids, such as benzenesulfonic acid or chlorobenzenesulfonic acid, as a forth component for exhibiting stripping effect. |
