发明名称 |
Forming a split-level CMOS device |
摘要 |
A method for forming CMOS device wherein the NMOS devices are bulk devices and the PMOS devices are SOI devices. The PMOS devices are formed with their channel regions in a silicon-on-insulator layer, preferably a laterally recrystallized annealed-polysilicon layer over a silicon dioxide layer.
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申请公布号 |
US4777147(A) |
申请公布日期 |
1988.10.11 |
申请号 |
US19870139536 |
申请日期 |
1987.12.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SCOTT, DAVID B.;MALHI, SATWINDER S. |
分类号 |
H01L21/822;H01L27/06;H01L27/092;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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