| 摘要 |
<p>A CCD for use as an interline transfer CCD in imaging apparatus is disclosed including photodetectors. The CCD includes opaque gate electrodes (14, 16) to avoid the need for light shielding of the gate electrodes. The desired opacity and low sheet resistance are achieved in the electrodes by the use of a dual-layer structure including a lower layer of doped polysilicon (14A, 16A) and an upper layer of a silicide (14B, 16B), such as tungsten silicide.</p> |
