发明名称 OPTICAL VOLTAGE/ELECTRIC FIELD SENSOR
摘要 <p>PURPOSE:To reduce scattering of bias points between probes due to anisotropy of crystal and variations in the degree of modulation, by reducing the thickness of a BSO or BGO element having Pockels effect. CONSTITUTION:Light emitted from a light source 1 is introduced to a sensor section 10 through an optical fiber 3a to be converted into a linearly polarized light with the passage thereof through a polarizer 5 and further into a circularly polarized light with a 1/4 wavelength plate 6. The circularly polarized light passes through BGO elements 7 having Pockels effect to cause a change in the polarization state thereof according to an AC voltage applied. The change in the polarization state thereof is converted with an analyzer 8 to a change in the intensity of light and received with a photodetector 2 through a rod lens 4b and an optical fiber 3b to be converted into an electrical signal. here, anisotropy between the BGO elements 7 can be lessened by reducing below 400mum the thickness of a surface in the direction of light passes.</p>
申请公布号 JPS63241365(A) 申请公布日期 1988.10.06
申请号 JP19870074289 申请日期 1987.03.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 HINATSU JIYUNJI
分类号 G01R15/24 主分类号 G01R15/24
代理机构 代理人
主权项
地址