| 摘要 |
PURPOSE:To shorten a process by a method wherein a gate electrode is formed, using a photo-resist as a mask, the photo-resist on the gate electrode is deformed and employed as a mask and first source-drain regions are shaped through an ion implantation method. CONSTITUTION:When source-drain diffusion regions are formed, a gate electrode 105 is shaped, using a photo-resist 104 as a mask. The photo-resist 104 is deformed so that an orthogonal projection image to a semiconductor substrate 10 of the end section of the photo-resist 104 on the gate electrode 105 surrounds the end section of the gate electrode 105 and is positioned outside the gate electrode 105. A reverse conductivity type impurity is introduced through an ion implantation method, employing a deformed photo-resist 104a as a mask, thus shaping first source-drain regions. Accordingly, the processes of the formation of a novel film and etchback are unnecessitated after the formation of the gate electrode and processes can be shortened largely, and the silicon substrate is not etched, and damage and the effect of contamination can be removed.
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