| 摘要 |
PURPOSE:To easily guarantee the characteristic fluctuation de to thermal or mechanical stress at manufacture and simultaneously to offer the adjusting means for gain adjustment as the system request by using a rewritable nonvolatile storage element and providing a write inhibition means to a part of nonvolatile storage elements. CONSTITUTION:The reference voltage generating circuit 10 is adjusted by a rewritable nonvolatile adjusting means 9 controlled by an input signal from a write terminal 7 and an address input terminal 8. An address data fed from the address input terminal 8 to an input register 21 controls an address decoder 22. The write voltage applied from the write terminal 7 is applied to the address decoder 22 through an inhibition circuit 24 or directly to write the voltage in the nonvolatile storage element 23. In being written with a specific bit, the inhibition circuit 24 acts like blocking the write voltage further. Thus, the zero transmission level is inputted to the address decoder 22 via the write inhibition circuit 24 having the gain frequency characteristic and the gain is adjusted by giving the write to the address decoder 12 directly.
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