| 摘要 |
PURPOSE:To reduce the element area of a bipolar transistor by forming an emitter region and a graft base region in a self-aligning manner with respect to an emitter electrode and a base electrode by an impurity diffusion from a polycrystalline silicon film. CONSTITUTION:An emitter electrode 9 and a base electrode 10 are simultaneously formed together with a collector electrode 18, gate electrode 23, 28, source electrodes 19, 24, and drain electrodes 20, 25 from the same polycrystalline silicon film 12 and high melting point metal silicide film 13. An emitter region 11 is formed in a self-aligning manner with respect to the electrode 9 by an impurity diffusion from an n<+> type polycrystalline silicon film 12a for forming the electrode 9. Further, a section contacted with the electrode 10 of the region 12 is formed by an impurity diffusion from a p<+> type polycrystalline silicon film 12b for forming the electrode 10. The other section is formed in a self- aligning manner with respect to the electrodes 9, 10 by impurity ion implanting to be conducted, for example, by masking the electrodes 9, 10. Thus, the occupying area of the element can be reduced to be highly integrated. |
