| 摘要 |
PURPOSE:To enable formation of a resist pattern in high contrast by a method wherein the prewet processing is performed using a developer in low concentration. CONSTITUTION:A substrate 1 is coated with positive type sensing resin and then selectively exposed to prewet-process using the first developer. Next, after further processing using the second developer in higher concentration than that of the first developer, the substrate 1 is linsed for pattern formation. This developer for prewet processing may be diffused from that for actural processing in the concentration not exceeding 1/2 of normal concentration for slightly developing exposed parts 20 for 10 seconds or less in consideration of throughput, etc. Through these procedures, a pattern taking an excellent shape can be formed to improve the yield and performance of element. |
