SOLAR CELLS ON THE BASIS OF CUINS.SUB.2

摘要

SOLAR CELLS ON THE BASIS OF CuInS2 Solar cells with photo anodes of semiconductor material on the basis of CuInS2, in particular produced in specially adapted methods, permit the transformation of light into electric energy with a good efficiency. Typical for the composition of the semiconductor material according to the invention are extraneous phases, namely In2S3, In and/or Cu2-xS (0? x ?1) in a concentration between 5 per thousand and 5 percent in the CuInS2. The energy gap of this material is 1.5 eV. Therewith work electrodes for photoelectrochemical solar cells or solid state solar cells can be constructed.