| 摘要 |
PURPOSE:To prevent disturbance of an etching process shape and deterioration of quality of a base insulating film and the like, which are caused by electrification of a mask, by using a conductive ceramic material as a mask material. CONSTITUTION:Since a mask 15 is conductive, charges flowing into the mask 15 escape to an earth terminal or the like via a polycrystal silicon film 14. Though an escaping path for electrons is lost when the polycrystal silicon film 14 is completely etched, the electrons continue to escape until the polycrystal silicon film 14 is completely isolated and so electrons accumulated in the mask are very few. Discharge or so of the electrons accumulated in the mask does not occur between the mask 15 and the substrate 11, so that deterioration of characteristic and so of the base SiO2 film 13 can be prevented from occurring.
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