| 摘要 |
PURPOSE:To enable the formation of a II-VI compound film in arbitrary shapes irrespective of crystallininty of a base substrate, by providing a compound film formation process on a substrate which has a non-nucleating surface with a small nucleation density and a nucleating surface with a nucleation density larger than that of the non-nucleating surface so that a II-VI compound film is selectively formed. CONSTITUTION:A piled film with a desired pattern can be formed self- matchingly by utilizing a difference in a density of nucleation between species of piled surface's materials of II-VI compound. The piled film with the desired pattern can be thus formed with high accuracy. When the piled surface's materials need not be limited to only single crystal and further a material of a nucleating surface (SMDL) 14 and a material of a non-nucleating surface 13, which have a difference in the density of nucleation between them, are selected, then the piled film of the II-VI compound can be formed also on an amorphous insulator.
|
