| 摘要 |
PURPOSE:To write a data at high speed, and also, to stably read-out by arranging a gate element on both sides of a pair of bit lines, using the gate element of a sense amplifier side to read-out only by making its channel width small, and using said element for write only by widening its channel width on the other side. CONSTITUTION:A read-out operation is executed in the same way as usual, until bit lines 1a-1h are equalized, thereafter, selected word lines 7a, 7b are set to an 'H' level and memory information is read out, and thereafter, ampli fied by sense amplifiers 2a-2d. The potential of the bit line amplified therein is read out to pairs of I/O lines 3a-3d, respectively through gate elements 8a-8h whose channel width is small, namely, whose on-resistance is large, therefore, a malfunction due to an unbalance, etc., is not generated. Also, as for a write operation, a write data on the pairs of I/O lines 3a-3d is written to the bit lines 1a-1h through gate elements 9a-9h whose channel width is large, namely, whose on-resistance is small, therefore, write is executed at a high speed.
|
