发明名称 PLASMA ETCHING DEVICE
摘要 PURPOSE:To obtain a uniform and good etching characteristic as well as to contrive the improvement of an etching rate by a method wherein an upper electrode is constituted of a pair of comb teeth-shaped electrodes. CONSTITUTION:Introduced gas is made to pass through the comb teeth-shaped gaps between comb teeth-shaped electrodes 2 and 3 to be introduced in an etching chamber 1 and the etching gas is efficiently decomposed and ionized by being made to pass through the gaps as high-density plasma is generated in the gaps by discharge. A smaller power compared to that of a first high-frequency power source 6 is supplied to a tabular electrode 4 from a second high- frequency power source 7. If the electrode 4 is assumed to be a lower electrode and the electrodes 2 and 3 fitted into each other are assumed to be an upper electrode, discharge is generated between both and etching is progressed. At this time, the power which is supplied to the electrode 4 and the frequencies are adjusted and the adjustment of a selection ratio and a processing form can be executed. Thereby, a uniform and good etching characteristic can be obtained and the etching rate is also quickened.
申请公布号 JPS63234532(A) 申请公布日期 1988.09.29
申请号 JP19870069909 申请日期 1987.03.24
申请人 TOSHIBA CORP 发明人 NARUGE YASUO;WATANABE TORU
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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