| 摘要 |
PURPOSE:To form protruding parts of an insulating film in a small shape, by generating plasma required for depositing the film, depositing the insulating film, applying a bias to an electrode at the same time, making ions hit, etching the slant part of the insulating film, and depositing the insulating film. CONSTITUTION:With respect to a sample substrate, an insulating film 22 and a wiring metal 23 are formed on a semiconductor substrate 21. The substrate is mounted on the electrode of a thin-film forming apparatus, and SiH4 and O2 are introduced. Plasma is generated, and SiO2 is deposited on the substrate. At this time, a high frequency bias is applied to the electrode 12 at the same time. Therefore, a sputtering effect of O2 ions is yielded on the sample substrate. In the O2 ion sputtering, the SiO2 is etched, but the metal is not etched. This is caused by the etching speed. As a result, protruding parts such as 24a can be formed in a small shape. Therefore the flattening time can be shortened.
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