| 摘要 |
PURPOSE:To improve the writing efficiency of data by conducting a switching element disposed between one end of a capacitor having the other end connected to the gate of a writing control transistor and a prescribed power source at the time of impressing a writing signal. CONSTITUTION:At the time of writing data, to the gates of the transistors C1-Cn for applying the high voltage VP of the writing power source to the drains of memory cells M11-Mnn, the high voltage VPP of the control power source and the voltage of the capacitor VC to which a voltage VDD is applied from the prescribed power source are applied. When the gate voltage of the transistor T2A of the switching element is raised, the transistor T2A is completely conducted and the high voltage VP of the writing power source is applied to the drains of the memory cells M11-Mnn and held. Thereby, the data is correctly and stably written in the memory cells M11-Mnn. |
