PRODUCTION OF III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To prevent the generation of linage and to improve the reproducibility in the liq. sealed type Czochralski method by controlling the temp. distribution in a furnace to make the specified region on the surface of the in-furnace melt into an insulating region in a specified temp. range. CONSTITUTION:A liq. sealing layer is provided on the melt, and a III-V compd. semiconductor single crystal is grown while pulling up the crystal from the melt. The region to the place 10-50mm distant from the surface of the liq. sealing layer is made into an insulating region. The temp. distribution in the furnace is controlled to keep the temp. of the insulating region within + or -20 deg.C of the surface temp. of the liq. sealing layer.