| 摘要 |
PURPOSE:To improve the characteristics of a sensor, such as of an optical responding speed by forming a conductive layer substantially equal to or slightly wider than that of a photodetecting region at a substrate side directly under the photodetecting region of a semiconductor layer formed of a pair of upper electrodes. CONSTITUTION:An auxiliary electrode 12 of a gate electrode with respect to main electrodes 6, 7 is formed corresponding only to the photodetecting region of a semiconductor layer 4 formed of a photodetecting window 8, or slightly wider in width. In order to reduce the superposition of the electrodes 6, 7 with the gate electrode as small as possible, it is desirable to form the gate electrode in the same size as that of the photodetecting region, but in order to prevent the superposition of masks during manufacturing steps from displacing due to the displacement of the mask alignment, a slightly wider gate electrode is preferably formed to reduce the irregularity of the capacity. Accordingly, the occurrence rate of short-circuits due to defects, such as pinholes is remarkably improved by the decrease in an optical response due to the capacity.
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