| 摘要 |
PURPOSE:To prevent breakdown of a surface protective film, disconnection of an electrode wiring and deterioration of moisture resistance by forming a wiring, in which either of a plurality of grooves or holes are shaped, and a surface protective film coating the surface of a semiconductor substrate, including the wiring to the outer circumferential section of the surface of the substrate and forming irregularites on the surface protective film by use of the grooves or the holes. CONSTITUTION:An aluminum metallic material as an electrode wiring 2 is applied onto an SiO2 oxide film in a semiconductor substrate 1, and a plurality of grooves 3 are shaped through etching, etc. The electrode wiring 2 is formed in thickness of approximately 1-1.5mum A surface protective film 4 in 1mum thickness is applied, including the electrode wiring 2 on the substrate 1. Consequently, when the surface protective film 4 is formed onto the electrode wiring 2 with the grooves 3, irregularities are formed to the surface protective film 4. Accordingly, even when thermal stress, etc., are generated, the breakdown of the surface protective film 4 is prevented, and the disconnection, etc., of the electrode wiring can also be avoided.
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