| 摘要 |
PURPOSE:To enable the formation of a uniform epitaxial film, by forming gas discharge pores on only a wall surface of an inner reaction tube which is on the side opposite to a nozzle and a substrate holder. CONSTITUTION:A reactive gas is injected from a nozzle 7 and made to pass through gas discharge pores 8 which are formed on a cylindrical surface of an inner tube 2 in an reaction tube and exhausted from an exhaustion port 9. These gas discharge pores 8 do not exist on the nozzle 7 side of the cylindrical surface of the inner tube 2 in the reaction tube, but they are formed in only a region opposite 180 degrees. Therefore, the reactive gas flows smoothly and a concentration of the reactive gas becomes uniform over the whole surface region of the single-crystal substrate 5, so that an epitaxial film can be formed uniformly inside the surface of the substrate.
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