| 摘要 |
PURPOSE:To improve the integration of a bipolar CMIS device by forming a channel interruption layer for preventing an MOS transistor from being parasitic to a bipolar element simultaneously at the step of cutting the channel of the step of manufacturing the CMIS device. CONSTITUTION:The formation 52 of a channel interruption layer for preventing an MOS transistor from being parasitic to a bipolar element is simultaneously performed at the step 51 of cutting the channel of the step 5 of manufacturing a CMIS element to be executed before the step 6 of manufacturing a bipolar element. The thickness of an oxide film is thin at the step 51 of the step 5, and an oxide film can be easily removed by etching. Thus, the channel interruption layer can be formed in a high dimensional accuracy, and the channel layer can be formed even at a fine position. Thus, intervals between the channel layer and the bipolar element and between the channel layer and an isolation are reduced to improve the integration of the bipolar CMIS device.
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