| 摘要 |
PURPOSE:To increase moistureproof strength by using a polycrystalline silicon layer formed onto an insulating film as a passivation film. CONSTITUTION:A polycrystalline silicon layer 1 is shaped onto an insulating film 2 consisting of silicon oxide as a passivation film for an integrated circuit composed of a semiconductor element having self-alignment structure, and the semiconductor element having self-alignment structure is connected to another element by a metallic wiring 3 made up of aluminum, etc. The insulating film 2 as the upper layer of the metallic wiring 3 insulates the polycrystalline silicon layer 1 and the metallic wiring 3, etc. Polycrystalline silicon has excellent mechanical strength, and is difficult to be cracked. Since polycrystalline silicon consists of a conductor approximately, potential is equalized. Since the insulating film 2 as a foundation also has passivation action, a passivation effect is completed because of double films. Even when there are pinholes in the polycrystalline silicon layer 1, possibility in which the pinholes are connected to pinholes in the insulating film 2 and the pinholes penetrate through the passivation film is reduced extremely, thus improving moisture resistance.
|
