发明名称 PRODUCTION OF SILICON NITRIDE-SILICON CARBIDE MIXED FINE POWDER
摘要 PURPOSE:To efficiently obtain the titled high-purity isometric fine powder of an uniform and fine particle shape, by thermally decomposing a specific organosilicon compound in the vapor phase in a nonoxidizing atmosphere without containing NH3 and heat-treating the resultant amorphous fine powder in an NH3-containing nonoxidizing atmosphere. CONSTITUTION:An organosilicon compound expressed by formula I or II (R is H, alkyl, allyl or phenyl; n is 1-4; R' is methylene, ethylene or phenylene; m is 1-2) is previously gasified and thermally decomposed in the vapor phase in a nonoxidizing atmosphere, such as N2, Ar- or H2-containing N2 or Ar, at 800-1,600 deg.C without using NH3 to provide amorphous spherical fine powder of uniform shape having <=0.3mu average particle diameter. The obtained fine powder is then heat-treated at 1,450-1,600 deg.C in a mixed gas atmosphere of 5-100vol.% NH3 and a nonoxidizing gas, such as N2 or Ar, for 0.5-24hr.
申请公布号 JPS63230509(A) 申请公布日期 1988.09.27
申请号 JP19870061276 申请日期 1987.03.18
申请人 MITSUBISHI GAS CHEM CO INC 发明人 ISAKI HIROMASA;KAWAKAMI TAKAMASA;SHIDARA TAKUJI;YAKIYOU KOUICHI
分类号 C01B21/068;C01B31/36;C04B35/626 主分类号 C01B21/068
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