| 摘要 |
PURPOSE:To execute an ashing process by applying a sheet process suitable for processing a lapse-diameter substrate to be processed, by a method wherein, after a hermetically sealed process chamber has been evacuated to produce a reduced pressure state, an appropriate amount of ashing gas is fed instantaneously into the process chamber. CONSTITUTION:A process chamber 18 is evacuated by using an evacuation mechanism 19 via an evacuation tube 20; the pressure inside the process chamber 18 is reduced. An ashing gas containing ozone which has been generated by an ozone generator 16 equipped with an oxygen supply source 15 is adjusted to an instantaneously appropriate flow rate by a gas flow-rate controlled 14 and is then flown onto the surface of a wafer 9 on a stage 10 from a discharge port 7 installed at a plane plate 6. It is detected by using, e.g., a magnetic switch whether this gas has been fed onto the surface of the wafer 9. A photoresist film which has been applied to the surface of the heated wafer 9 reacts with the ashing gas, an ashing process is executed and the photoresist removed.
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