| 摘要 |
PURPOSE:To make it possible to reinforce a metallic wiring and to flatten a contact part, by depositing and forming a semiconductor layer on the side wall of the step part of the metallic wiring, and forming the eutectic of the metallic wiring and a semiconductor layer. CONSTITUTION:An aluminum wiring 4, which is to become a metallic wiring, is deposited on the surface of a semiconductor device, in which a contact hole 3 is opened by a photolithography method and the like, by evaporation and the like. At this time, when the contact hole 3 is very small, aluminum is hard to be deposited in the inside of the contact hole due to the shadowing effect of a step. The aluminum is not deposited at all on a part of the side wall part. Therefore, an amorphous silicon layer 5, which is to become a semiconductor layer, is grown by a plasma CVD method and the like, and the contact hole 3 is filled. The upper part of the contact hole is made to be approximately flat. Since the plasma CVD is carried out at relatively low temperature, the amorphous silicon layer 5 is grown on the wiring 4 without damaging the already formed low-melting-point aluminum wiring 4. Thus eutectic alloy can be grown between both parts.
|
