| 摘要 |
PURPOSE:To decrease a parasitic capacity so as to spread a band width end besides to prevent laser oscillation from being generated even if this diode is operated at a large current or a low temperature, by forming a luminous region which contains an active layer 3 on a side of a light emission surface of a mesa striped semiconductor layer and forming a region on the opposite side of the light emission surface where light coming from the active layer becomes transparent and forming a nonreflective film on the light emission surface. CONSTITUTION:A mesa striped semiconductor layer is formed on a semiconductor substrate 1, and a luminous region 13 inclusive of an active layer 3 is formed on a light emission surface side of this mesa striped semiconductor layer, and a region 14, where light coming from the active layer 3 becomes transparent, is formed on the opposite side of the light emission surface, and a nonreflective film 11 is formed on the light emission surface. For example, the luminous region 13 is formed by piling a n-type InP buffer layer 2, an active layer 3, a p-type InP clad layer 4, and a p-type InGaAsP contact layer 5 on the n-type InP semiconductor substrate 1. The region 14 where the light coming from the active layer 3 becomes transparent is formed into the mesa striped shape by piling a buffer layer 2, a first buried layer 6 of p-type InP, and a second buried layer 7 of n-type InP on the semiconductor substrate 1. Further, the nonreflective film 11 of a silicon nitride film is formed on a cleaved end surface of the active layer-contained side. |
