| 摘要 |
PURPOSE:To obtain a semiconductor laser capable of high output operation and 0 deg. phase mode selective oscillation, by disposing a laser array, and an injection laser element part for injecting laser beams into the laser array, so that the optical axes are parallel mutually to a common base, through a groove formed perpendicularly to said parallel optical axes. CONSTITUTION:A laser array 53, and an injection laser element part 55 for injecting laser beams into the laser array 53, are disposed so that their optical axes are parallel mutually to a common base 51, through a groove 57 which is formed perpendicularly to said parallel optical axes. For example, respective laser element parts 53a to 53c in the laser array 53 are composed so that their optical axes are parallel mutually and their oscillation wavelengths are essentially identical to each other. Further, in the injection laser element part 55, oscillation wavelengths, which are essentially identical with those in the laser element parts of the laser array 53, are obtained, and the optical axis thereof is composed to be parallel to the optical axes of the laser element parts in the laser array 53. The laser array 53 and the injection laser element part 55 are separated through the groove 57 which are formed perpendicularly to their optical axes.
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