| 摘要 |
PURPOSE:To detect the displacement of an IC element pattern due to a mask alignment by providing a pattern of specific structure on a wafer as a monitoring pattern. CONSTITUTION:Patterns 100 and 200 are combined, and formed on a silicon semiconductor substrate. The pattern 100 is for measuring the resistance of a contact 20 of, for example, a first layer, such as aluminum layer 10 with a second layer, such as a layer made of a diffused layer 11, and the dimensional margin 30 of the contact 20 from the first and second layers is sufficiently increased with respect to a mask alignment displacement. A second kelvin pattern 200 has a similar structure to the first kelvin pattern 100 except a dimensional margin 70, which is an alignment margin or less. For example, a mask misalignment is detected to be evaluated by the magnitude of a contact resistance obtained by the pattern 200 with the contact resistance obtained, for example, from the pattern 10 as a reference. |
