Internal reflector interferometric semiconductor laser device

摘要

A semiconductor laser device in which a double-heterostructure multi-layered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel composed of alternate channel portions with different widths and lengths, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said alternate channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.