| 摘要 |
PURPOSE:To efficiently form a general-purpose functional deposited film having superior optical and electrical characteristics, by introducing gaseous starting material contg. a specified amt. of gaseous Si2F6 into a film forming chamber and by projecting microwave energy to generate plasma. CONSTITUTION:SiH4-contg. gaseous starting material for forming a deposited film is introduced into a film forming chamber in which a support has been set and microwave energy is projected to generate plasma. The gaseous starting material is decomposed and a functional deposited film is formed on the support. When the film is formed by the above-mentioned microwave plasma CVD, the gaseous starting material is mixed with <=10vol.%, preferably about 8.0-0.1%, especially preferably about 1.0-0.5% gaseous Si2F6. The internal pressure of the film forming chamber is preferably regulated to <=1.0Torr, the frequency of the microwaves to about 900MHz-50GHz and the temp. of the support to about 100-350 deg.C. Functional deposited films of a semiconductor alloy or the like having superior quality are stably formed over a long time and the generation of polysilane powder or the like can be prevented. |
