| 摘要 |
PURPOSE:To facilitate the control of the thickness distribution of a film formed in a vacuum vessel having a main exhaust port, by providing subsidiary exhaust ports to the vacuum vessel at positions close to targets arranged in the vessel so that the pressure distribution of gas around the targets is made uniform. CONSTITUTION:Subsidiary exhaust ports 5 are provided to the vacuum chamber 2 of a magnetron sputtering device having a main exhaust port 1 at positions close to target electrodes 4 arranged in the chamber 2. The chamber 2 is evacuated to a desired degree of vacuum through the main exhaust port 1, gas is introduced into the chamber 2 and the introduced gas is exhausted from the subsidiary exhaust ports 5 under control so that the distribution of the gas around the target electrodes 4 is made uniform. The thickness distribution of a film formed is controlled by regulating the distribution of the gas. Thus, a uniform thickness distribution of a film can be maintained over a long time.
|
