| 摘要 |
PURPOSE:To omit the patterning of semiconductor optical active layer entirely, by projecting an energy beam on the second extensions of second electrode films, and electrically connecting the first extensions of first electrode films and the second extensions of the second electrode films in series. CONSTITUTION:First electrode films 3a-3c having first extensions 3ae-3ce, which are extended to the one outer edge of a substrate 1 from generating regions 2a-2c, are divided and arranged for each of the generating regions 2a-2c on the insulated surface of the substrate 1. Then, a semiconductor optical active layer 4 is formed on the entire surface of the substrate 1. Then second electrode films 5a-5c having extensions 5ae-5ce, which are extended on the first extensions 3ae-3ce, are divided and arranged on the generating regions 2a-2c on the semiconductor optical generating regions 4. Then an energy beam is projected, and overlapped first and second extensions 3ae-3ce and 5ae-5ce are welded. Thus the neighboring generating regions 2a-2c are electrically connected in series.
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