| 摘要 |
PURPOSE:To decrease the effective mass of holes and to increase the mobility of the holes, by decreasing the mutual action between hole bands in a single quantum well by applying strain in a single quantum well structure. CONSTITUTION:A single quantum well structure comprising two kinds of semiconductors is formed. At this time the mutual actions between hole bands in the single quantum well are decreased by applying strain. When compression strain is applied by +1%, the discontinuous quantity of a valence band is increased by about 140 meV in GaAsxP(1-x) and GaAs, in which deformation potential is negative, in comparison with the case the strain is absent. As a result, the mutual actions between the heavy hole bands in the valence band in the GaAs layer is increased, and the mass of the holes in the vicinity of a Fermi surface is largely decreased. The mutual actions between the heavy holes in the valence band are similarly decreased by narrowing the width of the quantum well. Thus, the effective mass of the holes is decreased, and the mobility of the holes is increased.
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