| 摘要 |
This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering a power mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by final sintering of preliminary sintered material at a temperature raging from 700 to 1,500 DEG C, preferably from 700 to 1,300 DEG C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O2 containing atmosphere, at a partial pressure of Ar ranging from 1.0 x 10<-><3> to 1 x 10<-><1> Torr, preferably 5.0 x 10<-><3> to 1 x 10<-><1> Torr and at a partial pressure of O2 ranging from 0.5 x 10<-><3> to 1 x 10<-><1> Torr, preferably 1.0 x 10<-><3> to 1 x 10<-><1> Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250 DEG C to 1,700 DEG C, preferably from 250 DEG C to 1,200 DEG C. |
