| 摘要 |
PURPOSE:To improve a dielectric breakdown characteristic of an oxidizing film so as to upgrade reliability, by performing an annealing process for the oxidizing film in an atmosphere of a nitrogen gas or an inactive gas at a temperature higher than that in the case of forming the oxidizing film. CONSTITUTION:Silicon films 2 and 4 are formed serially on the periphery of an active region 3 of a single-crystal silicon substrate 1. The silicon oxidizing film 4 is formed by thermal oxidation at a temperature TO=900 deg.C in an atmosphere of oxygen diluted by nitrogen. An annealing process for the silicon oxidizing film 4 is performed in an atmosphere of a nitrogen gas 6. An annealing temperature TA is selected to be a temperature (for example 950 deg.C to 1100 deg.C) higher than a heat oxidation temperature TO. A polycrystal silicon electrode 5 is next formed so that an essential part of a MOS capacitor 10 is finished.
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