| 摘要 |
PURPOSE:To remove an undesirable film by previously clarifying the surface of a wafer through a dry etching means in a pretreatment chamber before the wafer is subjected to vapor growth in a vapor growth chamber and operating a wafer transfer means and an on-off valve means in the state left as it is. CONSTITUTION:High-speed argon atoms A are generated from a dry etching means 40, and the upper surfaces of wafers W are clarified. An on-off valve means 50 is opened after clarification, a wafer transfer means 70 is operated and a carrier C is shifted into a vapor growth chamber 10, and the on-off valve means 50 is closed. Vapor growth is conducted in the same manner as conventional devices in a growth process. The carrier C is moved to a pretreatment chamber 30, operating the on-off valve means 50 and the wafer transfer means 70 after the completion of vapor growth, and the wafers W are extracted. Consequently, the surfaces of the wafers W are purified through the dry etching means 40 in the pretreatment chamber 30 prior to vapor growth, and the wafers W are transferred to the vapor growth chamber as the surfaces are left as they are brought to a clean state and vapor growth is performed onto the surfaces. Accordingly, an epitaxial layer having correct crystal structure and high quality is acquired without being affected by an oxide film, etc.
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