| 摘要 |
PURPOSE:To increase the deposition rate, by inserting a part of a heat sink as the cooling medium into a target of the title sputtering device to cool the target to effectively moderate the temp. gradient of a target base material. CONSTITUTION:In a vacuum vessel 1 evacuated by a vacuum pump 9 a rotary pump 10, etc., the target 3 opposed to the wafer 5 on a sample holder 4 is fixed to the sputtering electrode 2 consisting of a magnet hole piece 13 through a backing plate 11. A voltage is impressed on the sputtering electrode 2 and an anode 6 by a DC variable power source 21. As a result, gaseous Ar is converted into plasma, the plasma is confined in the vicinity of the target by a magnetic field, the target 3 is sputtered, and a thin film is formed on the wafer 5. In such a sputtering device, the tip of a heat pipe 12 as the heat sink is inserted into the target 3. The target 3 is effectively cooled by the cooling water circulating in a passage 17 through the heat pipe 12.
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