| 摘要 |
PURPOSE:To form narrow element isolation regions as well as element in high concentration by a method wherein insulating films are formed on the side parts of grooves provided on the first conductivity type silicon substrate to deposit the second conductivity type silicon layer. CONSTITUTION:An SiO2 film is deposited on a p type silicon substrate 1 as a mask 2 in specified pattern to form grooves 3. Next, an oxide film is formed on exposed silicon surface; the oxide films on the groove bottoms are removed to form SiO2 films 4 for element isolation on the sides of grooves 3; ion is implanted in the silicon substrate 1 on the groove bottoms to form n<+>type layers 5; and Si is epitaxially grown on the surface of silicon substrate 1 in the grooves 3 to fill the grooves 3 with n type single crystal silicon layers simultaneously forming n wells 7 with n<+>type buried layers 6. Through these procedures, the substrate regions and well regions can be controlled by the thickness of insulating films 4 on the sides of groove 3 to form narrow isolation regions.
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