SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE:To omit a diode for surge protection and to decrease a terminal forming region by a method wherein a P-channel MOSFET for an unused output circuit and an N-channel MOSFET are each subjected to mask modification for diode connection. CONSTITUTION:The common drain connection part of a CMOS inverter in a non-conductive state is coupled between an input terminal 1 and an input gate circuit and each gate electrode of a P-channel MOSFET for an output circuit and an N-channel MOSFET, which are formed in the CMOS inverter in a non-conductive state, is connected to each one's source part and the source parts are each connected to the potential point of a power source VDD and an earth potential point. By this constitution, the source and drain parts of the MOSFET 7 form a P-N junction between the source and drain parts and the potential of the power source VDD, the source and drain parts of the MOSFET 8 form an N-P junction between the source and drain parts and the earth potential and the P N and N-P junctions respectively act as a diode.