| 摘要 |
PURPOSE:To prevent the surface from being oxidized and from being roughened as well as to reduce the sheet resistance by selecting the ratio between a thickness of high-melting point metal film and that of amorphous silicon film, thereby leaving a silicon layer on a silicide surface even after the silicification reaction. CONSTITUTION:On a ground 11, a high-melting metal Ti 12 and an amorphous silicon a-Si 13 are deposited. Now, the film thickness of the Ti 12 is set to 500Angstrom and the film thickness of the a-Si is set to 2000Angstrom , and they are annealed in a nitrogen atmosphere. Consequently, the Ti 12 and the a-Si 13 react with each other to form a silicide 14, but a-Si layer 15 comprised of the remaining a-Si 13 is left on the silicide 14 even after the reaction. If the ratio of the film thicknesses of the Ti 12 and a-Si 13 is selected as this, the Si layer can be left on the silicide surface even after the silicification reaction. With this, the oxidation of the upper surface of the silicide is prevented and the roughness of the surface is improved, and also the sheet resistance can be reduced.
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