| 摘要 |
PURPOSE:To stably produce a single crystalline wafer free from deterioration of characteristics in the peripheral part, by covering a base material of single crystal with a casing jig for heat treatment consisting of same kind of material as the base material of single crystal and heating it in an ampul in the case of producing the single crystalline wafer from the base material thereof. CONSTITUTION:The base material 8 of a single crystalline ingot of semiinsulating GaAs used as the base material of single crystal for a semiconductor is inserted in a casing jig 7 for heat treatment which is similarly made of GaAs single crystal and has a cylindrical shape, integrated and set in an ampul 6 made of quartz which is exhausted at high vacuum via the spacers 5' made of quartz. Similarly this is placed in a reaction pipe 2 made of quartz via the spacers 5. The inside of the reaction pipe 2 is made to the gaseous Ar atmosphere and it is heat-treated for 12-24hr at 950 deg.C with a heater 1 provided to the outside. After heat treatment, the base material 8 of single crystalline ingot of GaAs is taken out and the single crystalline wafer of GaAs is produced by slicing it at prescribed thickness. Thermal stress affected from the outer peripheral part or contamination from the atmosphere is prevented and thereby the single crystalline wafer of GaAs having a uniform structure and being free from generation of deterioration in the peripheral part is obtained.
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