| 摘要 |
PURPOSE:To manufacture a thin film transistor having a high field effect mobility on a low-cost glass substrate by forming a polycrystalline silicon film of a high degree of orientation having a particular plane orientation at a low temperature. CONSTITUTION:After heating a substrate 15 to 600 deg.C, a SiH4 gas 26 is introduced into a plasma chamber 12, and a magnetic field satisfying the electron cyclotron resonance condition is generated. A microwave 27 satisfying the resonance condition for this magnetic field is propagated into a microwave guide 17 and introduced into a plasma generating chamber 11 via a microwave introducing window 18. As a result, the gas 26 is decomposed by the interaction of the microwave 27 and the magnetic field, generating a plasma 28 composed of SiH2 ions. At this time, if a d.c. voltage is applied between a holder 14 and the chamber 12, the plasma 28 is deposited on the substrate 15 by the electric field directing to a vacuum chamber 13 and the diverging magnetic field, thereby forming a polycrystalline silicon film. With this, a thin film transistor of a high field effect mobility can be manufactured on a low-cost glass substrate.
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