| 摘要 |
PURPOSE:To improve the decomposition efficiency of a reactive gas and the quality of a thin film, by providing a specified filament for decomposing a reactive gas in the title device wherein the vapor of a partially ionized vapor- deposition substance is allowed to react with the reactive gas in the vicinity of a substrate. CONSTITUTION:The filament for decomposing a reactive gas such as a tungsten filament 35 is arranged in the supply port 34 provided at the tip of a reactive gas supply pipe 29. The inside of a vacuum vessel 1 is evacuated, and H2 32 as the reactive gas is introduced to the supply port 34 through the supply pipe 29, injected onto the filament 35 heated at a high temp., brought into contact with the filament, and decomposed into an H atom. The atom is radiated onto a cluster beam 16 or a substrate 18. In this case, since the heat radiated from the filament 35 is shielded by the supply port 34, the temp. of the substrate 18 an be kept low, and the redissociation of the thin compd. film formed on the surface of the substrate 18 can be prevented. In addition, the contact area between the reactive gas and the filament is increased, and the efficiency in the decomposition of the reactive gas can be enhanced.
|
