| 摘要 |
PURPOSE:To contrive the improvement of an ashing speed without lowering a selection ratio by a method wherein mixed gas obtainable by adding a trace quantity of inorganic fluorine compound gas to oxygen gas and hydrocarbon fluoride gas is brought in a plasma state to subject a resist to ashing. CONSTITUTION:Process gas shall be mixed gas of oxygen gas, hydrocarbon fluoride gas and a trace quantity of inorganic fluorine compound gas. The microwave of a frequency of 2.45 G Hz generated from a microwave oscillator 1 progresses through a waveguide 2 and is led into a plasma generating chamber 4 through a window made of quartz. The microwave is irradiated on the mixed gas introduced in the chamber 4 to generate plasma in the chamber 4. A mesh 5 made of Al is provided between the chamber 4 and a treating chamber 6, the mesh prevents the microwave from progressing to the chamber 6, radicals only are led in the chamber 6 and a water 9 is subjected to ashing treatment by the radicals. Thereby, the speed of the ashing treatment can be improved without lowering a selection ratio. |
