| 摘要 |
PURPOSE:To obtain a magnesia spinel layer of high crystal quality with good reproducibility and stably by a method wherein, after a low-grade oxide layer of Si is formed on an Si substrate, magnesia spinel is grown on the Si substrate. CONSTITUTION:After a low-grade oxide (SiOx; where 0 < x < 2) layer of silicon has been formed on a silicon substrate, magnesia spinel MgO.Al2O3 is grown on the silicon substrate. For example, said low-grade oxide layer is formed in the following way: after the silicon substrate has been surface- etched by hydrofluoric acid and has been cleaned by pure water, the substrate is immersed into the pure water which has been heated at more than 40 deg.C and less than 100 deg.C. In addition, the vapor growth of magnesia spinel is executed at atmospheric pressure in the following way: H2 for MgCl2 of a source, HCl+H2 tor Al of the source and CO + H2 for the Si substrate to be grown are introduced as reactive gases into a growth chamber 1; the temperature of the substrate is set at 900-925 deg.C; the temperature of MgCl2 is set at about 800 deg.C; the temperature of Al is set at about 600 deg.C.
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