| 摘要 |
PURPOSE:To prevent the deterioration of the performance of the titled device in use, by constituting a microwave ion source in the vapor deposition device wherein the microwave ion source is utilized and cluster ion beams are projected of both a cavity resonator having an aperture and a pipe in which microwave is transmitted and gas is passed through the inside. CONSTITUTION:A high-performance thin film of a compd. is formed on a substrate 6 by means of both high-activity exciting ion beams 3 of reactive gas projected toward the substrate 6 from a microwave ion source 2 and cluster ion beams 5 projected toward the substrate 6 from a cluster source 4. In this case, the microwave ion source 2 is constituted of both a cylindrical cavity resonator 19 having the aperture 20 for inputting microwave power in a central part and a pipe 21 which is arranged by penetrating the inside of the cavity resonator and transmits microwaves and also passes gas 22 through the inside. The gas 22 introduced into the pipe 21 is firstly resonated with the TM modes of microwave fed through the aperture 20 and made to gas 23 subjected to plasma and this gas 23 is projected toward the substrate 6 as exciting ion beams 3 through the outlet. Activated gas is passed through only the inner face of the pipe 21 and an be prevented from being deteriorated by touching other insulator or the like.
|
