| 摘要 |
PURPOSE:To obtain an SIP type semiconductor device with a lead, which has high strength and in which there is no dispersion, by providing a protruding section to the lead near the end section of resin seal. CONSTITUTION:With an SIP type semiconductor device, lead sections l' have protruding sections 5 in the vicinity of the end sections of the inside of a resin seal section 1, protrusions are projected to left and right to a shade shape in appearance, inner lead length is shortened, and No.i leads l'1 having narrow spaces with adjacent No.i-1 leads l'1-1 are shaped while being displaced so that protrusions are not superposed mutually. Accordingly, the leads, which have high tensile strength and in which there is no dispersion, can be acquired.
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